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P339 – 8″ HV sputter deposition METU MEMS

Application

HV sputter deposition system for thin film and multilayer deposition at 8″ substrates

Year of delivery

2011

Installation site

METU MEMS, Ankara, Turkey

Design Features

  • HV magnetron sputter deposition system with confocal sputter down configuration.
  • Up to four 4″ magnetrons in confocal configuration.
    • All magnetrons with pneumatic in situ tilting.
    • Gas inlet close to the target at all sources.
  • Fully motorized 2 axes sample manipulator with integrated heating stage for maximal sample temperature of 550°C.
  • Ion source for sample precleaning and mild etching.
  • Load lock chamber with storage.
  • Automatic sample transfer between both chambers.

Special Features

  • System is prepared for ion beam assisted deposition as well.
  • Handling of different sample sizes (default: 4″, 6″, 8″) are possible using special sample adapters.

Outer Dimensions

Technical specifications and performance values

General

Sputtering chamber

Size

640 mm diameter, about 860 mm height

Material

stainless steel

Load lock chamber

Size

400 mm diameter, about 760 mm height

Material

stainless steel

Vacuum

Sputtering chamber

Base pressure

< 10-7 mbar

Pump down time

2.5 hours to < 10-6 mbar

Chamber pumping

Turbo pumping stage with dry foreline pump

Load lock chamber

Base pressure

< 2 * 10-7 mbar

Pump down time

2 hours to < 5 * 10-7 mbar

Chamber pumping

Turbo pumping stage with dry foreline pump

Manipulator features

Sputtering chamber

Sample size

diameter max. 8″ wafer

Motion axes

2 motorized axes (z tranlsation and (continous) sample stage rotation)

Temperatures

Room temperature (not stabilized) up to 550°C at sample

Load lock chamber

(Sample storage)

Storage size

10 sample holders

Sample size

diameter max. 8″ wafer

Motion axes

motorized z tranlsation

Sample preparation features

Sputtering chamber

Plasma treatment

Up to 5 * 10-4 mbar partly ionised argon gas (using a griddless ion gun)

Ion beam etching /

sample precleaning

Wide range variation of ion source to sample distance

Wide range variation of ion energy and ion beam current

Performance test results

Chamber pump down
Deposition uniformity (confocal sputtering)